Junction-Less Monolayer MoS2 FETs

This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International Technology Roadmap for Semiconductors (ITRS), by employing rigorous quantum transport simulations. By comparing with MoS2 based conventional FETs, it is found that the JL structure naturally lends MoS2 FETs with superior device electrostatics, and higher ON-current for both high-performance and low-standby-power applications, especially at high impurity doping densities. Along with the advantages of the MoS2 JL-FETs, the effects of impurity scattering induced carrier mobility degradation of JL-FETs is also highlighted as a key technological issue to be addressed for exploiting their unique features

Irradiation of Nanostrained Monolayer WSe2_2 for Site-Controlled Single-Photon Emission up to 150 K

Quantum-dot-like WSe$_2$ single-photon emitters have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources have been an inhibitor of their full potential. Existing strain engineering methods face fundamental challenges in extending the working temperature while maintaining the emitter's fabrication yield and purity. In this work, we demonstrate a novel method of designing site-specific single-photon emitters in atomically thin WSe$_2$ with near-unity yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of these emitters exhibit exciton-biexciton cascaded emission, purities above 95%, and working temperatures extending up to 150 K, which is the highest observed in van der Waals semiconductor single-photon emitters without Purcell enhancement. This methodology, coupled with possible plasmonic or optical micro-cavity integration, potentially furthers the realization of future scalable, room-temperature, and high-quality van der Waals quantum light sources

When the Lewisian Dream Sours: Industrial Aspirations and Reverse Labour Migration

The COVID-19 pandemic has escalated processes of labour transition from industrial work to the informal economy, which have always characterized the life of the working poor. This paper explores this kind of reverse transition, that is, when the Lewisian dream of having an industrial job comes to an end, and workers are forced into a reverse migration. Specifically, the paper focuses on the post-industrial experiences of former Indian garment workers leaving the National Capital Region and moving back to Bihar. Emphasis is placed on workers’ reasons for leaving the industry and their current employment and reproductive strategies. Findings are based on a sample of 50 former workers, identified in urban industrial hamlets and traced back to their place of origin. Respondents’ experiences are analysed based on semi-quantitative questionnaires and life histories. Findings reveal that upon leaving the factory, workers find alternative informal employment through caste or social networks whilst using land as safety net. They suggest that farming and informal work are not alternative but rather complementary income and work strategies. By adopting a life-cycle approach to studying labour transitions across formal and informal employment domains, this analysis contributes to policy debates on decent work

The afterlife of industrial work: Urban-to-rural labour transitions from the factory to the informal economy

The COVID-19 pandemic has escalated processes of labour transition from industrial work to the informal economy, which have always characterized the life of the working poor. Exploring urban-to-rural labour transitions through a feminist political economy lens and adopting a life-cycle approach to labour and social reproduction, this paper analyses the post-industrial livelihoods and experiences of former Indian garment workers leaving the National Capital Region and moving back to Bihar. Emphasis is placed on workers’ reasons for leaving the industry and their current employment and reproductive strategies. Findings are based on a sample of 50 former workers, identified in urban industrial hamlets and traced back to their place of origin. Respondents’ experiences are analysed based on semi-quantitative questionnaires and life histories. Findings reveal that upon leaving the factory, workers find alternative informal employment through caste or social networks while using land as safety net. Farming and informal work are not alternative but rather complementary income and work strategies. By adopting a life-cycle approach to studying labour transitions across formal and informal employment domains, this analysis contributes to policy debates on decent work

Modeling techniques and verification methodologies for substrate coupling effects in mixed-signal system-on-chip designs

The substrate noise coupling problems in today's complex mixed-signal system-on-chip (MS-SOC) brings a new set of challenges for designers. In this paper, we propose a global methodology that includes an early verification in the design flow as well as a postlayout iterative optimization to deal with substrate noise, and helps designers to achieve a first silicon-success of their chips. An improved semi-analytical modeling technique exploiting the basic behaviors of this noise is developed. This method significantly accelerates the substrate modeling, avoids the dense matrix storage, and, hence, enables the implementation of an iterative noise-immunity optimization loop working at full-chip level. The integration of the methodology in a typical mixed-signal design flow is illustrated and its successful application to achieve a single-chip integration of a transceiver is demonstrated

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node. In this paper, for the first time, a comprehensive evaluation of the FG transistor made from emerging nanocrystals in the form of 2-dimensional (2D) transition metal dichalcogenides (TMDs) and multilayer graphene (MLG) is presented. It is shown that TMD based 2D channel materials have excellent gate length scaling potential due to their atomic scale thicknesses. On the other hand, employing MLG as FG greatly reduces cell-to-cell interference and alleviates reliability concerns. Moreover, it is also revealed that TMD/MLG heterostructures enable new mechanism for improving charge retention, thereby allowing the effective oxide thickness of gate dielectrics to be scaled to a few nanometers. Thus, this work indicates that judiciously selected 2D-nanocrystals can significantly extend the lifetime of the FG-based memory cell

Penerapan Model Pembelajaran Numbered Heads Together (Nht) Dalam Upaya Untuk Meningkatkan Keaktifan Dan Hasil Belajar Mahasiswa Prodi Pendidikan IPA Ust YOGYAKARTA Tahun Akademik

: This research has been done to know how NHT as a model of study could increase activity and achievement the students of natural science education department on 2013/2014 of academic year. This was a class action research. This research consisted of two cycles. Each cycles was consist of planning, doing, observing and reflecting. The instruments of this research were lecture-observing papers, students-observing papers, evaluating papers and statements papers. The result showed increasing of students\u27 activity. At first discussion on first cycles, there were 52.5% active students, at last discussion on second cycles there were 90.8% active students. The average of students\u27 achievement has increased 15.3 points, i.e. from 63.2 to 78.5